C1815 H(200-400)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encap sulate Transistors C1815 SOT-23 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : HF 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA Collector cut-off current ICEO VCE=50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA DC current gain hFE VCE= 6V, IC= 2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V Transition frequency fT VCE=10V, IC= 1mA, f=30MHz 80 MHz CLASSIFICATION OF h FE Rank Range L H 130-200 200-400 B,Mar,2012 C1815 Typical Characteristics IC 5 —— VCE IC Ta=100℃ hFE 4 12uA DC CURRENT GAIN IC (mA) —— COMMON EMITTER Ta=25℃ 14uA COLLECTOR CURRENT hFE 1000 16uA 10uA 3 8uA 2 6uA Ta=25℃ 100 4uA 1 IB=2uA COMMON EMITTER VCE= 6V 10 0.1 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 1 IC VBEsat —— 2000 100 Ta=100 ℃ Ta=25℃ 100 150 10 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 500 10 VCE (V) IC (mA) IC 1000 Ta=25℃ Ta=100 ℃ β=10 β=10 10 1 10 100 COLLECTOR CURREMT IC 150 100 —— IC 1 (mA) VBE fT 1000 IC (mA) IC —— fT (mA) (MHz) COMMON EMITTER VCE= 6V 100 150 10 COLLECTOR CURREMT TRANSITION FREQUENCY IC 10 T= a 25 ℃ T= a 10 0℃ COLLECTOR CURRENT 100 0.1 150 1 100 COMMON EMITTER VCE=10V Ta=25℃ 0.1 0 300 600 900 10 0.1 1200 1 BASE-EMMITER VOLTAGE VBE (mV) 50 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib C (pF) Ta=25 ℃ Cob CAPACITANCE PC 250 f=1MHz IE=0/IC=0 10 10 COLLECTOR CURRENT —— IC 100 (mA) Ta 200 150 100 50 0.1 0.1 1 REVERSE VOLTAGE 10 V (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Mar,2012